jiangsu changjiang electronics technology co., ltd to-92 plastic-encapsulate transistors d882 transist or (npn) fea tures power dissip a tion www .cj- e l e c.c o m1 , ,201 1. emitter 2. collector 3 . base equivalent circuit co ll e c tor - base vo l tage 4 0 v co ll e c tor - e m itter vo l tage 3 0 v e m itter - base vo l tage 6 v co ll e c tor current - continuous 3 a co ll e c tor power dissipati on 6 2 5 m w jun c tion te m perature 1 st orage t e m perature - 55 t her m a l resist an c e ro m jun c tion o a m bient / w 1 to-92 bulk 1000pcs/bag tape 2000pcs/box
www.cj-elec.com a t =25 unless otherwise specified parameter symbol test conditions m t collector -base breakdown voltage v (br)cbo i c = 100 a, i e =0 40 v collector -emitter breakdown voltage v (br)ceo i c = 10 m a, i b =0 30 v emitter-bas e breakdown voltage v (br)ebo i e = 100 a, i c =0 6 v collector cut-off current i cbo v cb = 40v, i e =0 1 a collector cut-off current i ceo v ce = 30v, i b =0 10 a emitter cut-off current i ebo v eb = 6v, i c =0 1 a dc curren t gain h fe v ce =2v, i c = 1a 60 400 collector -emitter saturation voltage v ce(sat ) i c = 2a, i b = 0 . 2 a 0 . 5 v base-emitte r saturation voltage v be(sat) i c = 2a, i b = 0 . 2 a 1 . 5 v tra nsition frequency f t v ce = 5v , i c =0 . 1a f =10mhz 50 mhz classification of h fe rank r o y gr range 60 - 120 100 - 200 160 - 320 200 - 400
0 300 600 900 1200 1 10 100 1000 10 100 1000 100 1000 0 25 50 75 100 125 150 0 125 250 375 500 625 750 10 100 1000 1 10 100 1000 10 100 1000 0 100 200 300 400 500 600 0.1 1 10 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 100 1 10 100 comm o n em itter v ce = 2v v be i c ?? base-emmi ter voltage v be (mv) collector current i c (ma) t a =2 5 t a = 1 0 0 3000 =10 i c v besat ?? base-emitte r saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 3000 2000 p c ?? t a ambient t e mperature t a ( ) collector power dissipation p c (mw) t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 3000 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 2v 3000 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse volt ag e v ( v) capacitance c (pf ) 20 500 4.4ma 4.95ma 5.5ma i b =0.55ma common emitter t a =25 collector-emitter voltage v ce (v) collector current i c (a) static characteristic 2.75ma 3.3ma 3.85ma 1.1ma 1.65ma 2.2ma v ce =5v t a =25 o c transition fre quency f t (mhz) collector current i c (ma) i c f t ?? 500 5 www.cj-elec.com , ,20 typical characteristics
a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d4. 4.700 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 1.270 typ 0.050 typ
7 d s h d q g 5 h h o z z z f m h o h f f r p
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